| PART |
Description |
Maker |
| KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
| IRF7506PBF IRF7506 IRF7506TRPBF IRF7406PBF IRF7506 |
Generation V Technology
HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
ULTRA LOW ON RESISTANCE
|
IRF[International Rectifier]
|
| KRF7343 |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| IRLML5103TRPBF |
Generation V Technology
|
TY Semiconductor Co., L...
|
| IRF7304 |
Generation V Technology
|
International Rectifier
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| IKW15N120T2 IKW15N120T208 |
Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
